Nonporous Silicon Diffusion Coating on Steel Using Silicon Carbide and Titanium Powders

Titanium Impurities in Silicon, Diamond, and Silicon Carbide

Since transition metal impurities affect the electronic and optical properties of semiconductors [1], it is important to understand the role of such unavoidable impurities on those properties. At the same time, transition metals in semiconductors can be used in other unusual situations. The energy levels related to transition metal impurities are aligned with respect to each other for the same ...

Synthesis of nanophase silicon, carbon, and silicon carbide powders using a plasma expansion process

Nanophase powders of Si, C, and SiC with narrow size distributions are synthesized by dissociating reactants in a dc arc plasma and quenching the hot gases in a subsonic nozzle expansion. The plasma is characterized by calorimetric energy balances and the powders by on-line aerosol measurement techniques and conventional materials analysis. The measured nozzle quench rate is about 5 X 106 K/s. ...

Silicon Nitride and Silicon Carbide

Silicon carbide microdisk resonator.

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.

Silicon Carbide Neutron Detectors

The potential of Silicon Carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. In fact, the first SiC neutron detector was demonstrated more than fifty years ago (Babcock, et al., 1957; Babcock & Chang, 1963). This detector was shown to be operational in limited testing at temperatures up to 700 oC. Unfortunately, further development was limited by the poo...